IR2110SPBF vs IRS21814MTRPBF Vergleich

Detaillierter Direktvergleich von IR2110SPBF von Infineon und IRS21814MTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2110SPBF IRS21814MTRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,98 $0,81
Funktion Half-bridge gate driver —
Topologie High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.3 V and 5 V CMOS/LSTTL
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
Betriebstemperaturbereich -40 C to +125 C —
Gehäuse 16-pin SOIC (SO-16, DW suffix) 16-MLPQ (4x4 mm) with Exposed Pad
Montageart Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Configuration — High and Low Side, Independent
Driver Channels — 2 (half-bridge)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (bootstrap)
Offset Voltage (High-Side) — Up to +600 V
Peak Source Current (typ.) — 1.9 A
Peak Sink Current (typ.) — 2.3 A
Propagation Delay (typ.) — 180 ns
Delay Matching (HS to LS) — [DATA_NEEDED: HS-LS delay matching spec]
Undervoltage Lockout — Yes (VCC and VBS)
dV/dt Immunity — Yes (negative-transient tolerant)
Betriebstemperatur — -40C to +125C
Packaging — Tape & Reel
RoHS-Status — Compliant

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