IR2110SPBF vs IRS21814MTRPBF 对比

详细并排对比 IR2110SPBF 出自 Infineon 和 IRS21814MTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IR2110SPBF IRS21814MTRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.98 $0.81
功能 Half-bridge gate driver —
拓扑 High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.3 V and 5 V CMOS/LSTTL
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
工作温度范围 -40 C to +125 C —
封装 16-pin SOIC (SO-16, DW suffix) 16-MLPQ (4x4 mm) with Exposed Pad
安装类型 Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Configuration — High and Low Side, Independent
Driver Channels — 2 (half-bridge)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (bootstrap)
Offset Voltage (High-Side) — Up to +600 V
Peak Source Current (typ.) — 1.9 A
Peak Sink Current (typ.) — 2.3 A
Propagation Delay (typ.) — 180 ns
Delay Matching (HS to LS) — [DATA_NEEDED: HS-LS delay matching spec]
Undervoltage Lockout — Yes (VCC and VBS)
dV/dt Immunity — Yes (negative-transient tolerant)
工作温度 — -40C to +125C
Packaging — Tape & Reel
RoHS 状态 — Compliant

数据手册与资源

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