IR2110SPBF vs IRS21814MTRPBF Comparison

Detailed side-by-side comparison of IR2110SPBF by Infineon and IRS21814MTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2110SPBF IRS21814MTRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Function Half-bridge gate driver —
Topology High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.3 V and 5 V CMOS/LSTTL
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
Operating Temperature Range -40 C to +125 C —
Package 16-pin SOIC (SO-16, DW suffix) 16-MLPQ (4x4 mm) with Exposed Pad
Mounting Type Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Configuration — High and Low Side, Independent
Driver Channels — 2 (half-bridge)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (bootstrap)
Offset Voltage (High-Side) — Up to +600 V
Peak Source Current (typ.) — 1.9 A
Peak Sink Current (typ.) — 2.3 A
Propagation Delay (typ.) — 180 ns
Delay Matching (HS to LS) — [DATA_NEEDED: HS-LS delay matching spec]
Undervoltage Lockout — Yes (VCC and VBS)
dV/dt Immunity — Yes (negative-transient tolerant)
Operating Temperature — -40C to +125C
Packaging — Tape & Reel
RoHS Status — Compliant

Datasheets & Resources

Browse All Products Create BOM Request Quote