IR21271STRPBF vs IR21271SPBF Vergleich

Detaillierter Direktvergleich von IR21271STRPBF von Infineon und IR21271SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR21271STRPBF IR21271SPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,82 $0,71
Configuration High-Side or Low-Side High-side, low-side capable (floating channel)
Anzahl der Ausgänge 1 —
Input Polarity Non-Inverting —
Supply Voltage (VCC) 9 V to 20 V —
High-Side Offset Voltage 600 V max —
Peak Source Current 250 mA —
Peak Sink Current 500 mA —
Propagation Delay 200 ns typical —
Anstiegszeit [DATA_NEEDED: rise time] —
Abfallzeit [DATA_NEEDED: fall time] —
Betriebstemperatur -40C to +125C —
Gehäuse 8-SOIC (3.90 mm) 8-SOIC
Montageart Surface Mount Surface Mount
Lead-Free / RoHS Yes (Pb-Free, suffix PBF) —
Integrated Current Sense Yes (CS pin + shutdown) —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (high-side rail) —
Product Type — Single-channel high-side gate driver with current sensing
Technology — HVIC and latch-immune CMOS
Maximum Floating Supply Voltage — 600 V
Output Source Current — 0.25 A
Output Sink Current — 0.5 A
Gate Drive Voltage Range — 9 V to 20 V (per related IR2127 datasheet family)
Input Logic Compatibility — 3.3 V CMOS / LSTTL
Input Type — Non-inverting
Negative Transient Tolerance (dV/dt) — Tolerant
Bootstrap Operation — Supported (floating channel)
Integrated Current Sensing — Yes
Lead Finish — Lead-free (PbF)
Betriebstemperaturbereich — -40C to +125C (industrial)
RoHS-Status — Compliant
Number of Channels — 1

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