IRF1310NSTRLPBF vs IRLS3036TRLPBF Vergleich

Detaillierter Direktvergleich von IRF1310NSTRLPBF von Infineon und IRLS3036TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF1310NSTRLPBF IRLS3036TRLPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,84 $1,39
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 73.3 nC —
Power Dissipation (PD) at TC=25C 160 W —
Power Dissipation (PD) at TA=25C 3.8 W —
Betriebstemperaturbereich -55C to +175C -55C to +175C
Gehäuse D2PAK (TO-263AB) D2PAK (TO-263), surface mount
Montageart Surface Mount Surface Mount
Technology IR MOSFET (HEXFET) IR HEXFET (planar DMOS)
Built-in Diode Yes (intrinsic body diode) —
Lead-Free / RoHS Yes (PBF suffix) —
Configuration Single with built-in diode —
Polarity — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25C — 270 A
Continuous Drain Current (Id) at Tc=100C — 195 A
Pulsed Drain Current (Idm) — 1100 A
Rds(on) max @ Vgs=10V — 1.9 mOhm
Gate-Source Threshold Voltage (Vgs(th)) — Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max]
Total Gate Charge (Qg) typ — 91 nC
Gate-Source Voltage (Vgs) max — [DATA_NEEDED: Vgs max +/- V]
Power Dissipation (Pd) at Tc=25C — 380 W
MSL-Level — 1
RoHS-Status — Compliant (PBF suffix)
Lead-Free — Yes (PBF suffix)
Integrated Body Diode — Yes (avalanche rated)

Datenblätter & Ressourcen

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