IRF1310NSTRLPBF vs IRLS3036TRLPBF Comparación
Comparación detallada lado a lado de IRF1310NSTRLPBF por Infineon y IRLS3036TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF1310NSTRLPBF | IRLS3036TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,84 | $1,39 |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 73.3 nC | — |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55C to +175C |
| Encapsulado | D2PAK (TO-263AB) | D2PAK (TO-263), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | IR MOSFET (HEXFET) | IR HEXFET (planar DMOS) |
| Built-in Diode | Yes (intrinsic body diode) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Configuration | Single with built-in diode | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 270 A |
| Continuous Drain Current (Id) at Tc=100C | — | 195 A |
| Pulsed Drain Current (Idm) | — | 1100 A |
| Rds(on) max @ Vgs=10V | — | 1.9 mOhm |
| Gate-Source Threshold Voltage (Vgs(th)) | — | Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] |
| Total Gate Charge (Qg) typ | — | 91 nC |
| Gate-Source Voltage (Vgs) max | — | [DATA_NEEDED: Vgs max +/- V] |
| Power Dissipation (Pd) at Tc=25C | — | 380 W |
| Nivel MSL | — | 1 |
| Estado RoHS | — | Compliant (PBF suffix) |
| Lead-Free | — | Yes (PBF suffix) |
| Integrated Body Diode | — | Yes (avalanche rated) |