IRF1010ZPBF - 55V 75A N-Channel MOSFET TO-220AB | Infineon
Teilenummer: IRF1010ZPBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.35 | $2,35 |
| 10 | $2.11 | $21,10 |
| 100 | $1.82 | $182,00 |
| 500 | $1.58 | $790,00 |
| 1.000 | $1.36 | $1.360,00 |
IRF1010ZPBF Übersicht
A power MOSFET is a voltage-controlled semiconductor switch used in the power-management layer of electronic systems, sitting between gate drivers and the load in the hierarchy of power semiconductors. Unlike bipolar transistors, MOSFETs switch with essentially no DC gate current, which simplifies drive circuitry and improves efficiency in switched-mode power supplies, motor drives, and DC-DC converters.
Key features of the IRF1010ZPBF include advanced process technology for extremely low RDS(on) per silicon area, a high 175C maximum junction temperature, fast switching speed, and improved repetitive avalanche rating. The Z suffix denotes the low-charge gate design family, reducing driver losses in high-frequency switching. The PBF suffix indicates a lead-free, RoHS-compliant construction suitable for global markets.
Technically, the device uses Infineon HEXFET multi-cell geometry with a trench-based advanced process that minimizes conduction losses: at 7.5 mOhm and 75 A, conduction loss is roughly 42 W at full rated current, so designers typically operate well below this in thermally constrained enclosures. The low gate charge supports efficient operation with common gate-driver ICs in the tens to hundreds of kilohertz range.
Typical applications include DC motor control and H-bridge legs, switching regulators, battery-powered inverters, UPS output stages, and automotive or industrial relay replacement circuits. High current rating and wide distributor availability make it a common choice for repair and maintenance of legacy power boards.
A key design consideration is thermal management: the TO-220AB package requires a heatsink or generous copper area above approximately 10 W of dissipation, and gate-drive resistors should be sized to control switching-edge ringing without slowing transitions excessively.
This page synthesizes distributor pricing context, drop-in alternatives, practical design notes, and a parametric comparison table not found in the manufacturer datasheet.
Drop-in-Alternativen für IRF1010ZPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IRF1010ZPBF (gleiche Bauform und Footprint) – abweichend in Package, Mounting Type, RoHS Status, Technology, Avalanche Rating.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRF1010Z
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
AUIRF1010Z
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF1405Z
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF1405PBF
✅ Drop-In✓ Auf Lager
$1.42 / Stück
Datenblatt ansehen →IRF2907ZSTRLPBF
✅ Drop-In✓ Auf Lager
$1.55 / Stück
Datenblatt ansehen →IRF3205ZSTRLPBF
✅ Drop-In✓ Auf Lager
$1.45 / Stück
Datenblatt ansehen →IRF3808
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF1010ZPBF Grenzwerte & elektrische Eigenschaften
| Polarity | N-Channel |
| Drain-Source Voltage (Vdss) | 55 V |
| Continuous Drain Current (Id) at Tc | 75 A (Tc=25C) |
| Power Dissipation (Pd) at Tc | 140 W (Tc=25C) |
| Total Gate Charge (Qg) | 63 nC (typ, per Mouser listing) |
| MOSFET Operating Mode | Enhancement |
| Gehäuse | TO-220AB (3-pin + tab), Through Hole |
| Configuration | Single MOSFET |
| Maximum Junction Temperature | 175 C |
| Montageart | Through Hole |
| Qualification | JEDEC industry standard qualification |
| Avalanche Rating | Improved repetitive avalanche rated |
| RoHS-Status | Compliant (PBF = Pb-free) |
| Lead Status | Lead Free |
IRF1010ZPBF Pin-Konfiguration
| Pin 1 | G — Gate - control terminal |
| Pin 2 | D — Drain - connected to metal mounting tab |
| Pin 3 | S — Source - power return terminal |
Sicherer Arbeitsbereich (TO-220AB, Tc=25C)
Typische Anwendungen
IRF1010ZPBF ist geeignet für 6 Anwendungs: DC Motor Control and H-Bridge Legs, Switching Regulators and DC-DC Converters, Inverters and UPS Output Stages, Relay and Contactor Replacement Switching, Automotive and Heavy-Equipment Auxiliary Power, Repair and Maintenance of Legacy Power Boards.
DC Motor Control and H-Bridge Legs
The IRF1010ZPBF fits DC motor controllers and H-bridge legs because its 55 V drain-source rating comfortably covers 12 V and 24 V motor buses with avalanche headroom, while its approximately 7.5 mOhm typical on-resistance keeps conduction losses low at the tens of amps typical of brushed and brushless motor loads. In a half-bridge or full-bridge topology, two to four MOSFETs switch the motor winding with PWM from a gate driver; the improved repetitive avalanche rating absorbs inductive energy from stalled or reversing loads. The Z-series low gate charge reduces switching loss at typical 10-25 kHz PWM frequencies, and the TO-220AB through-hole tab simplifies mounting on chassis or finned heatsinks common in motor-drive enclosures.
Empfohlen
Switching Regulators and DC-DC Converters
In buck and boost converters operating from 12 V to 48 V input rails, the IRF1010ZPBF serves as the main switching transistor where its 63 nC total gate charge supports efficient switching in the tens of kilohertz to low hundreds of kilohertz range without excessive driver dissipation. The low on-resistance directly reduces conduction loss during the on-time, improving converter efficiency at high output currents. Designers should trade off switching frequency against gate-charge losses: each ampere of gate-drive current delivers Qg per cycle, so a 63 nC device at 100 kHz draws about 6.3 mA of average gate-drive current. The TO-220AB package allows direct heatsink mounting for converters handling 100 W or more, simplifying thermal design in industrial power supplies.
Empfohlen
Inverters and UPS Output Stages
Battery-powered inverters and UPS output stages switch low-voltage DC buses (12 V, 24 V, 48 V) into AC via push-pull or full-bridge arrays, a role the IRF1010ZPBF handles well thanks to its 55 V rating (with margin over 24-48 V buses), 75 A case-rated current, and 140 W dissipation capability with proper heatsinking. Multiple devices are paralleled per leg to share current; the low RDS(on) of the Z process aids natural current sharing because conduction loss dominates at 50/60 Hz output frequencies, keeping switching losses small. The through-hole TO-220AB package supports robust screw-mounted heatsinks and high-current bus wiring typical of inverter boards, and its wide distributor availability simplifies service and repair of legacy UPS platforms.
Empfohlen
Relay and Contactor Replacement Switching
Replacing electromechanical relays with MOSFET switches eliminates contact arcing, wear, and coil drive power. The IRF1010ZPBF suits DC load switching up to 55 V and well beyond 20 A when heatsinked, with only milliwatts of static gate-drive power. A simple low-side configuration drives the gate from a logic signal through a 10-20 Ohm resistor; the 7.5 mOhm typical on-resistance drops under 0.4 V at 50 A, far less than relay contact resistance under load. Its improved repetitive avalanche rating tolerates inductive kick from solenoids, valves, and contactor coils. Designers must respect the gate threshold window and add gate protection zener clamping in noisy industrial environments, plus a bleeder resistor to guarantee defined off-state.
Empfohlen
Automotive and Heavy-Equipment Auxiliary Power
For 12 V and 24 V vehicle auxiliary power switching (winches, inverters, heater elements, lighting banks), the IRF1010ZPBF provides the voltage margin and current capability required. The automotive-grade AUIRF1010Z variant of the same die is available when AEC-style qualification is needed, sharing the identical TO-220AB pinout. Load-dump transients on vehicle rails are absorbed partly by the avalanche rating and partly by external TVS clamp diodes, which should still be fitted because 55 V Vdss alone does not cover severe load-dump events. Low on-resistance limits self-heating during continuous high-current operation, and the through-hole package withstands vibration better than SMD alternatives when mechanically clipped or screwed to a bracket.
Empfohlen
Repair and Maintenance of Legacy Power Boards
The IRF1010ZPBF is a mainstay for servicing industrial power supplies, welders, and motor controllers originally built with International Rectifier HEXFET devices. Because the part remains active under Infineon and is stocked broadly by DigiKey, Mouser, and Rochester Electronics, repairs avoid long lead times. The industry-standard TO-220AB Gate-Drain-Source pinout means it directly replaces IRF1010Z, and cross-reference guides list IRF1405 and IRF3205Z families as substitutes for harder-to-find variants. When repairing, technicians should verify gate-drive amplitude and heatsink condition, since degraded thermal interfaces are a common root cause of repeated MOSFET failure in legacy boards.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRF1010ZPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRF1010Z | IRF1405Z | IRF2907Z | IRF3205Z |
|---|---|---|---|---|---|
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | Infineon (International Rectifier HEXFET) | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage | 55 V | 55 V | 55 V | 75 V | 55 V |
| Continuous Drain Current (Tc) | 75 A | 75 A | 169 A class | 82 A class | 110 A class |
| RoHS / Lead Finish | RoHS compliant (PBF) | Tin-lead (non-PBF) | Pb-free variants available | Pb-free variants available | Pb-free variants available |
Wichtigste Unterscheidungsmerkmale
- Z-series low gate charge in a legacy pinout (vs. IRF1405Z)
- RoHS-compliant Pb-free construction (vs. IRF1010Z)
- Broadly stocked legacy availability (vs. IRF2907Z)
Designhinweise
The 140 W rating applies at a case temperature held at 25 C, which in practice means a large heatsink or forced air. Estimated: at 30 A and 7.5 mOhm, conduction dissipation is about 6.75 W (I^2 x R = 900 x 0.0075), so with a typical 2 C/W heatsink plus 0.5 C/W junction-to-case, junction rise is roughly 17 C over the heatsink - acceptable. At full 75 A the device cannot run DC without liquid-level cooling; derate or parallel devices.
Even in through-hole designs, keep the gate loop short: place the gate-driver output and return path close to pin 1 and pin 3 to minimize parasitic inductance that causes gate ringing. Use a 10-22 Ohm gate resistor to damp ringing, and add a 10k-20k gate-to-source pull-down so the MOSFET stays off if the driver is unpowered. Kelvin-connect the source return for the driver separately from high-current power flow if the layout allows.
Do not exceed 55 V Vdss including switching spikes and inductive kick; add a TVS or snubber on motor and inverter loads. The 75 A rating assumes Tc=25C case and 10 V gate drive - never rely on it at logic-level gate voltage, since RDS(on) rises sharply near threshold. Verify avalanche energy versus load inductance when hard-switching solenoids. Also note the mounting tab is at Drain potential - isolate the heatsink or use an insulating pad where the tab is not grounded.
Compliance-Informationen
PBF suffix denotes Pb-free/RoHS-compliant construction; qualification per JEDEC industry standard per manufacturer product description. REACH and halogen-free status not stated in provided data.
