IRF5305STRRPBF vs IRFR5305TRLPBF Vergleich
Detaillierter Direktvergleich von IRF5305STRRPBF von Infineon und IRFR5305TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF5305STRRPBF | IRFR5305TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,38 |
| Transistortyp | P-Channel MOSFET | — |
| Technology | HEXFET (Advanced Process) | HEXFET fifth-generation planar MOSFET |
| Drain-to-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max @ VGS=-10V | 60 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | [DATA_NEEDED: VGS(th) range] |
| Power Dissipation (TC) | 110 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55C to +175C |
| Gehäuse | D2PAK (TO-263) Surface Mount | TO-252AA (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free suffix) | Yes (Pb-free, suffix "PBF") |
| Packaging | Tape & Reel (TR) | — |
| Polarity | P-Channel | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -31 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 65 mΩ |
| RDS(on) max at VGS=-5V | — | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Tape & Reel Orientation | — | Left orientation (TRLPBF = Tape & Reel, Left) |