IRF5305STRRPBF vs IRFR5305TRLPBF Comparison

Detailed side-by-side comparison of IRF5305STRRPBF by Infineon and IRFR5305TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF5305STRRPBF IRF5305STRRPBF - P-CH 55V 31A HEXFET MOSFET D2PAK | Infineon

IRF5305STRRPBF - P-CH 55V 31A HEXFET MOSFET D2PAK | Infineon

IRF5305STRRPBF βœ“ Active

Specification Comparison

Parameter IRF5305STRRPBF IRFR5305TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.38
Transistor Type P-Channel MOSFET β€”
Technology HEXFET (Advanced Process) HEXFET fifth-generation planar MOSFET
Drain-to-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at TC -31 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max Β±20 V β€”
RDS(on) max @ VGS=-10V 60 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: VGS(th) range]
Power Dissipation (TC) 110 W β€”
Power Dissipation (TA) 3.8 W β€”
Operating Junction Temperature -55C to +175C -55C to +175C
Package D2PAK (TO-263) Surface Mount TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (Pb-free suffix) Yes (Pb-free, suffix "PBF")
Packaging Tape & Reel (TR) β€”
Polarity P-Channel β€”
Polarity / Channel Type β€” P-Channel
Drain-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID) at Tc=25C β€” -31 A
Gate-Source Voltage (VGS) max β€” Β±20 V
RDS(on) max at VGS=-10V β€” 65 mΞ©
RDS(on) max at VGS=-5V β€” [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C β€” 110 W
Avalanche Rated β€” Yes (fully avalanche rated)
Tape & Reel Orientation β€” Left orientation (TRLPBF = Tape & Reel, Left)

Datasheets & Resources

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