IRF530NPBF vs IRFZ44NPBF Vergleich

Detaillierter Direktvergleich von IRF530NPBF von Infineon und IRFZ44NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF530NPBF IRFZ44NPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,38 $0,65
Part Number IRF530NPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Transistortyp N-Channel HEXFET Power MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 17 A —
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 90 mOhm (max, approximate per datasheet) 17.5 mOhm
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Maximum Power Dissition (Pd) at Tc 70 W —
Betriebs-Sperrschichttemperatur -55 C to +175 C -55C to +175C
Gehäuse / Bauform TO-220AB (through-hole) —
Montageart Through Hole Through Hole
Avalanche Rated Yes —
RoHS-Status Compliant Compliant
MSL-Level N/A (through-hole) —
Configuration Single N-channel, 3 pins (Gate, Drain, Source) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Total Gate Charge (Qg) — 42 nC
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
Gehäuse — TO-220AB (3-pin + tab)
Technology — HEXFET (Advanced Process)
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]

Datenblätter & Ressourcen

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