IRF530NPBF vs IRFZ44NPBF Comparison

Detailed side-by-side comparison of IRF530NPBF by Infineon and IRFZ44NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF530NPBF IRFZ44NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.65
Part Number IRF530NPBF β€”
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Transistor Type N-Channel HEXFET Power MOSFET β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Tc 17 A β€”
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 90 mOhm (max, approximate per datasheet) 17.5 mOhm
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Maximum Power Dissition (Pd) at Tc 70 W β€”
Operating Junction Temperature -55 C to +175 C -55C to +175C
Package / Case TO-220AB (through-hole) β€”
Mounting Type Through Hole Through Hole
Avalanche Rated Yes β€”
RoHS Status Compliant Compliant
MSL Level N/A (through-hole) β€”
Configuration Single N-channel, 3 pins (Gate, Drain, Source) β€”
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at Tc=25C β€” 49 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Gate-to-Source Voltage (VGS) max β€” +/- 20 V
Total Gate Charge (Qg) β€” 42 nC
Power Dissipation (PD) at Tc=25C β€” 94 W
Thermal Resistance Junction-to-Case (RthJC) β€” 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) β€” 62 C/W
Package β€” TO-220AB (3-pin + tab)
Technology β€” HEXFET (Advanced Process)
Avalanche Energy Rating (EAS) β€” [DATA_NEEDED: EAS rating]

Datasheets & Resources

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