IRF530NPBF vs IRFZ44NPBF 비교
다음의 상세 나란히 비교: IRF530NPBF 제조: Infineon 및 IRFZ44NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF530NPBF | IRFZ44NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.38 | $0.65 |
| Part Number | IRF530NPBF | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| 트랜지스터 유형 | N-Channel HEXFET Power MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 90 mOhm (max, approximate per datasheet) | 17.5 mOhm |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Maximum Power Dissition (Pd) at Tc | 70 W | — |
| 동작 접합 온도 | -55 C to +175 C | -55C to +175C |
| 패키지 / 케이스 | TO-220AB (through-hole) | — |
| 실장 유형 | Through Hole | Through Hole |
| Avalanche Rated | Yes | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | N/A (through-hole) | — |
| Configuration | Single N-channel, 3 pins (Gate, Drain, Source) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| Total Gate Charge (Qg) | — | 42 nC |
| Power Dissipation (PD) at Tc=25C | — | 94 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 62 C/W |
| 패키지 | — | TO-220AB (3-pin + tab) |
| Technology | — | HEXFET (Advanced Process) |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS rating] |