IRF7342PBF vs IRF7313TRPBF Vergleich

Detaillierter Direktvergleich von IRF7342PBF von Infineon und IRF7313TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7342PBF IRF7313TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,89 $0,27
Manufacturer Infineon Technologies Infineon (formerly International Rectifier)
Part Number IRF7342PBF IRF7313TRPBF
Original Mfr International Rectifier (now Infineon) —
Technology HEXFET (Gen V) - P-Channel MOSFET Array IR MOSFET Generation V (HEXFET Fifth Generation)
Configuration Dual P-Channel (2 independent MOSFETs) —
Drain-Source Voltage V(DSS) -55 V —
Continuous Drain Current I(D) 3.4 A —
On-Resistance R(DS(on)) 0.105 ohm —
Power Dissipation P(D) 2 W —
Montageart Surface Mount Surface Mount
Gehäuse / Bauform 8-SOIC (SO-8) —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] -55C to +150C (junction)
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] —
Switching Frequency Optimization < 100 kHz —
RoHS-Status Compliant —
Halogen Status Halogen-Free —
Qualification JEDEC standard —
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Gehäuse — 8-pin SOIC (SO-8) surface mount
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
MSL-Level — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

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