IRF7342PBF vs IRF7313TRPBF 比較
詳細な並列比較: IRF7342PBF メーカー: Infineon および IRF7313TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF7342PBF | IRF7313TRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.89 | $0.27 |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Part Number | IRF7342PBF | IRF7313TRPBF |
| Original Mfr | International Rectifier (now Infineon) | — |
| Technology | HEXFET (Gen V) - P-Channel MOSFET Array | IR MOSFET Generation V (HEXFET Fifth Generation) |
| Configuration | Dual P-Channel (2 independent MOSFETs) | — |
| Drain-Source Voltage V(DSS) | -55 V | — |
| Continuous Drain Current I(D) | 3.4 A | — |
| On-Resistance R(DS(on)) | 0.105 ohm | — |
| Power Dissipation P(D) | 2 W | — |
| 実装タイプ | Surface Mount | Surface Mount |
| パッケージ / ケース | 8-SOIC (SO-8) | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range] | -55C to +150C (junction) |
| Gate Threshold Vgs(th) | [DATA_NEEDED: Vgs(th)] | — |
| Switching Frequency Optimization | < 100 kHz | — |
| RoHS ステータス | Compliant | — |
| Halogen Status | Halogen-Free | — |
| Qualification | JEDEC standard | — |
| Transistor Configuration | — | Dual N-Channel (Independent) |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) max | — | 6.5 A per channel |
| On-Resistance (RDS(on)) max | — | 29 mOhm at VGS=10V |
| Power Dissipation (PD) max | — | 2 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: ±V rating] |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (typical range) |
| パッケージ | — | 8-pin SOIC (SO-8) surface mount |
| Lead-Free / Pbf | — | Yes (lead-free plating) |
| Avalanche Rated | — | Yes |
| MSLレベル | — | 1 |
| Qualification Standard | — | Consumer market (per IR datasheet) |
| Shipping Media | — | Tape & Reel (TRPBF suffix) |