IRF7342PBF vs IRF7313TRPBF 비교
다음의 상세 나란히 비교: IRF7342PBF 제조: Infineon 및 IRF7313TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF7342PBF | IRF7313TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.89 | $0.27 |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Part Number | IRF7342PBF | IRF7313TRPBF |
| Original Mfr | International Rectifier (now Infineon) | — |
| Technology | HEXFET (Gen V) - P-Channel MOSFET Array | IR MOSFET Generation V (HEXFET Fifth Generation) |
| Configuration | Dual P-Channel (2 independent MOSFETs) | — |
| Drain-Source Voltage V(DSS) | -55 V | — |
| Continuous Drain Current I(D) | 3.4 A | — |
| On-Resistance R(DS(on)) | 0.105 ohm | — |
| Power Dissipation P(D) | 2 W | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 패키지 / 케이스 | 8-SOIC (SO-8) | — |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range] | -55C to +150C (junction) |
| Gate Threshold Vgs(th) | [DATA_NEEDED: Vgs(th)] | — |
| Switching Frequency Optimization | < 100 kHz | — |
| RoHS 상태 | Compliant | — |
| Halogen Status | Halogen-Free | — |
| Qualification | JEDEC standard | — |
| Transistor Configuration | — | Dual N-Channel (Independent) |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) max | — | 6.5 A per channel |
| On-Resistance (RDS(on)) max | — | 29 mOhm at VGS=10V |
| Power Dissipation (PD) max | — | 2 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: ±V rating] |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (typical range) |
| 패키지 | — | 8-pin SOIC (SO-8) surface mount |
| Lead-Free / Pbf | — | Yes (lead-free plating) |
| Avalanche Rated | — | Yes |
| MSL 레벨 | — | 1 |
| Qualification Standard | — | Consumer market (per IR datasheet) |
| Shipping Media | — | Tape & Reel (TRPBF suffix) |