IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon
Teilenummer: IRF7343TRPBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.25 | $1,25 |
| 10 | $1.05 | $10,50 |
| 100 | $0.85 | $85,00 |
| 500 | $0.72 | $360,00 |
| 1.000 | $0.62 | $620,00 |
IRF7343TRPBF Übersicht
A dual MOSFET array integrates two independent MOSFETs into a single package, simplifying PCB layout for half-bridges, full-bridges, and synchronous rectifiers where complementary switching is required. The N+P polarity combination allows designers to implement push-pull stages, H-bridges, and complementary load drivers with one component instead of two discrete devices, saving board area and reducing parasitic inductance between the two switches. This product category sits within the broader hierarchy: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor device, and serves as a fundamental building block in switch-mode power conversion and motor control.
Key features include 0.043 ohm typical on-resistance for the N-channel, fully avalanche-rated ruggedness, lead-free construction, and generation V technology that minimizes conduction loss. The part is specified for surface-mount reflow assembly and is RoHS compliant, making it suitable for modern lead-free manufacturing lines. The combined 2 W power dissipation and SO-8 thermal footprint enable compact designs without external heatsinking at moderate load currents.
Typical applications include DC motor drivers, solenoid and valve drivers, half-bridge and full-bridge converters, battery protection circuits, and synchronous rectifier stages in low-voltage DC-DC converters. The complementary polarity also makes it useful for high-side/low-side gate drive bootstrapping in discrete converter implementations.
When designing with this device, ensure the SO-8 pad layout includes adequate copper area on both drain pads for thermal dissipation. Verify that gate drive voltage levels (VGS) comfortably exceed each channel's threshold for the chosen load current, and add a gate-source resistor to prevent parasitic turn-on in half-bridge applications.
Drop-in-Alternativen für IRF7343TRPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IRF7343TRPBF (gleiche Bauform und Footprint) – abweichend in Technology, Package, Configuration, Part Number, Manufacturer.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRF7343PBF
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IRF7313TRPBF
✅ Drop-In✓ Auf Lager
$0.27 / Stück
Datenblatt ansehen →IRF7389TRPBF
✅ Drop-In✓ Auf Lager
$0.58 / Stück
Datenblatt ansehen →IRF7328PBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF7343TRPBF Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Status | Active |
| Transistortyp | N and P-Channel Complementary MOSFET Array |
| Technology | IR MOSFET (HEXFET Generation V) |
| Drain-to-Source Voltage (VDS) - N-Channel | 55 V |
| Drain-to-Source Voltage (VDS) - P-Channel | 55 V |
| Continuous Drain Current (ID) - N-Channel | 4.7 A |
| Continuous Drain Current (ID) - P-Channel | 3.4 A |
| On-Resistance (RDS(on)) - N-Channel | 0.043 ohm (typical per chipdig.com) |
| On-Resistance (RDS(on)) max | 50 mOhm |
| Power Dissipation (PD) | 2 W |
| Gehäuse | 8-SOIC (SO-8) |
| Montageart | Surface Mount |
| Lead-Free | Yes |
| RoHS Compliance | Compliant |
IRF7343TRPBF Pin-Konfiguration
| Pin 1 | S1 — Source of MOSFET 1 (N-channel) |
| Pin 2 | G1 — Gate of MOSFET 1 (N-channel) |
| Pin 3 | D1/D2 — Drain of MOSFET 1 / Drain of MOSFET 2 (internally connected) |
| Pin 4 | S2 — Source of MOSFET 2 (P-channel) |
| Pin 5 | S2 — Source of MOSFET 2 (P-channel) |
| Pin 6 | D2 — Drain of MOSFET 2 (P-channel) |
| Pin 7 | G2 — Gate of MOSFET 2 (P-channel) |
| Pin 8 | S2 — Source of MOSFET 2 (P-channel) |
Sicherer Arbeitsbereich - N-Channel
Typische Anwendungen
IRF7343TRPBF ist geeignet für 6 Anwendungs: DC Motor Half-Bridge Driver, Solenoid and Valve Driver, Battery Protection and Load Switching, Synchronous Rectifier for Low-Voltage DC-DC, H-Bridge Driver for Bidirectional DC Loads, Audio Amplifier Output Stage (Discrete).
DC Motor Half-Bridge Driver
The IRF7343TRPBF's complementary N+P-channel pair in SO-8 simplifies half-bridge DC motor drive circuits. The N-channel handles low-side switching up to 4.7 A continuous, while the P-channel handles high-side switching up to 3.4 A continuous at 55 V VDS. According to the Infineon datasheet, this eliminates the bootstrap circuit required for N-channel high-side switches, reducing component count. The 0.043 ohm N-channel RDS(on) keeps conduction losses low, and the Generation V HEXFET process ensures avalanche ruggedness during motor stall conditions. For battery-powered tools, robotics, and small appliances, the SO-8 footprint integrates both switches with a single thermal path, simplifying PCB layout. The 2 W power dissipation ceiling requires modest copper-pour heatsinking at sustained loads above 2 A.
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Solenoid and Valve Driver
The IRF7343TRPBF is well-suited to driving inductive loads such as solenoids, relays, and hydraulic valves in industrial automation. Its complementary polarity allows bidirectional control of a single coil with just two MOSFETs, replacing discrete N+P configurations that occupy more board area. The fully avalanche-rated energy handling protects the device when the coil's stored energy collapses at turn-off, a critical requirement per Infineon's Generation V HEXFET specification. With 4.7 A N-channel and 3.4 A P-channel current capability, it can drive medium-current 24 V industrial solenoids comfortably. The SO-8 package supports reflow assembly and the lead-free PBF finish meets RoHS requirements for factory automation equipment. A flyback or TVS clamp is recommended at the coil for maximum avalanche protection.
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Battery Protection and Load Switching
For battery management and load disconnect switching in 12 V and 24 V battery systems, the IRF7343TRPBF provides complementary high-side and low-side switching in one SO-8. The P-channel can serve as a reverse-battery protection switch on the high side (no bootstrap needed), while the N-channel handles low-side load switching for pulse-width modulation or current limiting. According to Infineon datasheet ratings, the 55 V VDS headroom accommodates transients on 24 V industrial battery buses, and the 0.043 ohm RDS(on) minimizes quiescent drain on the battery when in the on state. The Generation V process gives low gate charge for fast switching, important in protection circuits that must disconnect within microseconds. RoHS-compliant PBF finish is mandatory for portable battery-powered consumer products.
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Synchronous Rectifier for Low-Voltage DC-DC
In low-voltage buck converters and synchronous rectifier stages, the IRF7343TRPBF's N-channel can serve as the synchronous rectifier (low-side) switch. With 4.7 A current capability and 0.043 ohm RDS(on), it delivers good efficiency in 12 V-to-3.3 V or 12 V-to-5 V buck topologies at moderate currents. While the part's 55 V VDS is overkill for low-voltage converters, the Generation V HEXFET process provides low gate charge for fast switching transitions, reducing switching loss. The P-channel is not used in a typical buck topology but is available for auxiliary functions. For higher-current synchronous rectification, consider pairing with a dedicated low-VDS Infineon HEXFET, but for sub-3 A designs the IRF7343TRPBF integrates a useful spare P-channel for housekeeping rails.
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H-Bridge Driver for Bidirectional DC Loads
The IRF7343TRPBF can form half of an H-bridge for bidirectional control of DC brushed motors, bidirectional solenoids, or polarity-reversing relays. Two IRF7343TRPBF devices provide four MOSFETs (two N+P pairs) in two SO-8 packages, enabling full H-bridge operation with just two part numbers. The complementary topology simplifies gate drive: high-side P-channels turn on with ground-referenced gate signals, eliminating the bootstrap supply complexity of N-channel-only bridges. Per Infineon's 55 V rating, the H-bridge can operate on 24 V industrial supplies with margin. The fully avalanche-rated ruggedness protects against the back-EMF spikes generated when commutating inductive loads. PCB layout must keep the four switches symmetric to minimize shoot-through and ringing.
Empfohlen
Audio Amplifier Output Stage (Discrete)
For discrete Class-AB or Class-D audio amplifier output stages, the IRF7343TRPBF's complementary N+P pair provides a matched push-pull output without the need for matched-pair selection. The N-channel handles the lower half of the audio waveform (sink current up to 4.7 A) and the P-channel handles the upper half (source current up to 3.4 A). While not a true audio-grade MOSFET, the Generation V HEXFET process offers reasonable linearity and fast switching for moderate-fidelity applications such as powered speaker outputs, subwoofer amplifiers, and headphone amplifiers. The 55 V VDS allows operation on +/-24 V analog rails. For high-end audio, dedicated audio MOSFETs with matched transconductance are preferred, but the IRF7343TRPBF is a cost-effective solution for general-purpose audio output stages.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRF7343TRPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRF7343PBF | IRF7313TRPBF | IRF7389TRPBF | IRF7328PBF | IRF5305PBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) |
| Package | SO-8 (8-SOIC) | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | TO-220 - different package |
| Polarity | N+P Complementary | N+P Complementary | N+N Dual N-channel | N+P Complementary | N+N Dual N-channel | Single P-channel |
| Technology | Generation V HEXFET | Generation V HEXFET | Generation V HEXFET | HEXFET family | HEXFET family | HEXFET family |
| Mounting | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Through-Hole |
Wichtigste Unterscheidungsmerkmale
- Only SO-8 dual MOSFET in HEXFET family with complementary N+P polarity at 55 V/4.7 A in SO-8 (vs. IRF7313TRPBF)
- Matches IRF7389 family but optimized for 55 V VDS systems (vs. IRF7389TRPBF)
- Sole SO-8 drop-in with both MOSFETs in Generation V HEXFET technology (vs. IRF7328PBF)
Designhinweise
The IRF7343TRPBF dissipates up to 2 W in free air with the SO-8 footprint. Estimated: with 1 sq inch of copper pour on the drain pads (typical 1 oz copper), theta_JA is approximately 50 C/W, giving a junction temperature rise of 100 C at 2 W dissipation. For continuous operation above 1.5 A per channel, increase copper area to at least 2 sq inches or add thermal vias to internal copper planes. Always check the datasheet's SOA curve before operating at high VDS x ID product points.
Use the standard SO-8 dual MOSFET land pattern with the center pins 3/4/5 connected to copper pour for the N-channel drain and P-channel drain (which are often internally tied). For low-side switching applications, both drains can share a single copper pour. For half-bridge applications, isolate the drains into separate copper pours to handle the high-side and low-side switching nodes independently. Place gate resistors (10-100Ω) close to the gate pins to dampen parasitic oscillations.
Do not assume the SO-8 dual MOSFET pinout is universal across manufacturers - competitors may use mirrored or staggered pin assignments. Always verify the pinout against the datasheet before PCB layout. Also, do not exceed the avalanche energy rating during inductive load turn-off; add a flyback diode, TVS, or snubber across inductive loads to limit dv/dt. Finally, note that the P-channel's VGS(th) is typically negative (e.g., -1V to -3V), so gate drive signals must swing to VGS(on) of about -10V for full enhancement.
Compliance-Informationen
The 'PBF' suffix explicitly indicates lead-free finish per Infineon part-number convention. RoHS compliance confirmed via DigiKey listing and Infineon product page. AEC-Q100 qualification status not specifically called out - this part is targeted at industrial/consumer, not automotive.
