IRF7469TRPBF vs IRFH5020TRPBF Vergleich
Detaillierter Direktvergleich von IRF7469TRPBF von Infineon und IRFH5020TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7469TRPBF | IRFH5020TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,37 | $0,36 |
| FET Type | N-Channel | MOSFET N-Channel, Metal Oxide |
| Technology | IR MOSFET™ (HEXFET) | — |
| Drain-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) at TA=25°C | 9 A | — |
| Rds(on) Max at Vgs=10V | 17 mΩ | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Gate-Source Voltage (Vgs) Max | ±20 V | — |
| Power Dissipation (Pd) at TA=25°C | 2.5 W | — |
| Betriebstemperaturbereich | -55°C to +150°C (Tj) | -55 °C to +150 °C (TJ max) |
| Gehäuse | 8-SO (SOIC-8) | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | 1 (per industry standard for PQFN-8) |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Halogenfrei | Yes | — |
| Channel Mode | Enhancement | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Family | — | HEXFET Power MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TA=25°C | — | 5.1 A |
| Pulsed Drain Current (IDM) | — | 63 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 55 mΩ |
| Gate Charge (Qg) typ | — | 11 nC |
| Power Dissipation (TA=25°C) | — | 3.6 W |
| Verlustleistung (TC=25°C) | — | 8.3 W |
| Thermal Resistance, Junction-to-PCB (RthJB) | — | 0.8 °C/W |
| Package Type | — | 8-PQFN (5x6 mm) SuperSO8 |
| Profile Height | — | ≤ 0.9 mm |
| Qualification Standard | — | JEDEC (Normal level) |
| Gate Drive Optimization | — | 10 V VGS |
| RoHS Compliance | — | Compliant (Pb-free suffix PBF) |