IRF7469TRPBF vs IRFH5020TRPBF Comparación
Comparación detallada lado a lado de IRF7469TRPBF por Infineon y IRFH5020TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7469TRPBF | IRFH5020TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,37 | $0,36 |
| FET Type | N-Channel | MOSFET N-Channel, Metal Oxide |
| Technology | IR MOSFET™ (HEXFET) | — |
| Drain-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) at TA=25°C | 9 A | — |
| Rds(on) Max at Vgs=10V | 17 mΩ | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Gate-Source Voltage (Vgs) Max | ±20 V | — |
| Power Dissipation (Pd) at TA=25°C | 2.5 W | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C (Tj) | -55 °C to +150 °C (TJ max) |
| Encapsulado | 8-SO (SOIC-8) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (unlimited) | 1 (per industry standard for PQFN-8) |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Sin halógenos | Yes | — |
| Channel Mode | Enhancement | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Family | — | HEXFET Power MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TA=25°C | — | 5.1 A |
| Pulsed Drain Current (IDM) | — | 63 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 55 mΩ |
| Gate Charge (Qg) typ | — | 11 nC |
| Power Dissipation (TA=25°C) | — | 3.6 W |
| Disipación de potencia (TC=25°C) | — | 8.3 W |
| Thermal Resistance, Junction-to-PCB (RthJB) | — | 0.8 °C/W |
| Package Type | — | 8-PQFN (5x6 mm) SuperSO8 |
| Profile Height | — | ≤ 0.9 mm |
| Qualification Standard | — | JEDEC (Normal level) |
| Gate Drive Optimization | — | 10 V VGS |
| RoHS Compliance | — | Compliant (Pb-free suffix PBF) |