IRF7469TRPBF vs IRFH5020TRPBF Comparaison
Comparaison détaillée côte à côte de IRF7469TRPBF par Infineon et IRFH5020TRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRF7469TRPBF | IRFH5020TRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,37 | $0,36 |
| FET Type | N-Channel | MOSFET N-Channel, Metal Oxide |
| Technology | IR MOSFET™ (HEXFET) | — |
| Drain-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) at TA=25°C | 9 A | — |
| Rds(on) Max at Vgs=10V | 17 mΩ | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Gate-Source Voltage (Vgs) Max | ±20 V | — |
| Power Dissipation (Pd) at TA=25°C | 2.5 W | — |
| Plage de température de fonctionnement | -55°C to +150°C (Tj) | -55 °C to +150 °C (TJ max) |
| Boîtier | 8-SO (SOIC-8) | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (unlimited) | 1 (per industry standard for PQFN-8) |
| Statut RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Sans halogène | Yes | — |
| Channel Mode | Enhancement | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Family | — | HEXFET Power MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TA=25°C | — | 5.1 A |
| Pulsed Drain Current (IDM) | — | 63 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 55 mΩ |
| Gate Charge (Qg) typ | — | 11 nC |
| Power Dissipation (TA=25°C) | — | 3.6 W |
| Dissipation de puissance (TC=25°C) | — | 8.3 W |
| Thermal Resistance, Junction-to-PCB (RthJB) | — | 0.8 °C/W |
| Package Type | — | 8-PQFN (5x6 mm) SuperSO8 |
| Profile Height | — | ≤ 0.9 mm |
| Qualification Standard | — | JEDEC (Normal level) |
| Gate Drive Optimization | — | 10 V VGS |
| RoHS Compliance | — | Compliant (Pb-free suffix PBF) |