IRF7749L1TRPBF vs BSC0906NSATMA1 Vergleich
Detaillierter Direktvergleich von IRF7749L1TRPBF von Infineon und BSC0906NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7749L1TRPBF | BSC0906NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,88 | $0,48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7749L1TRPBF | — |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET / IR MOSFET | OptiMOS |
| Drain-to-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at TA=25 C | 33 A | — |
| Pulsed Drain Current (IDM) at TC=25 C | 200 A | — |
| Gate-to-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.9 V | [DATA_NEEDED: VGS(th) typ/min/max] |
| Drain-Source On-Resistance RDS(on) max | 1.5 mOhm at VGS=10 V | — |
| Drain-Source On-Resistance RDS(on) typ | 1.1 mOhm at VGS=10 V | — |
| Total Gate Charge (Qg) | 200 nC max | [DATA_NEEDED: Qg @ VGS=10V] |
| Gate-Drain Charge (Qgd) typ | 71 nC | — |
| Power Dissipation (Ptot) at TC=25 C | 125 W | — |
| Power Dissipation (Ptot) at TA=25 C | 3.3 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 45 K/W max | — |
| Gehäuse | DirectFET Isometric L8 | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | 1 (per JEDEC J-STD-020) | — |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 63 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| RDS(on) max (typical reference) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Betriebstemperaturbereich | — | -55C to +150C (junction, typical) |
| Pin-Anzahl | — | 8 |
| RoHS-Status | — | Compliant |