IRF7749L1TRPBF vs BSC0906NSATMA1 对比
详细并排对比 IRF7749L1TRPBF 出自 Infineon 和 BSC0906NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7749L1TRPBF | BSC0906NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.88 | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7749L1TRPBF | — |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET / IR MOSFET | OptiMOS |
| Drain-to-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at TA=25 C | 33 A | — |
| Pulsed Drain Current (IDM) at TC=25 C | 200 A | — |
| Gate-to-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.9 V | [DATA_NEEDED: VGS(th) typ/min/max] |
| Drain-Source On-Resistance RDS(on) max | 1.5 mOhm at VGS=10 V | — |
| Drain-Source On-Resistance RDS(on) typ | 1.1 mOhm at VGS=10 V | — |
| Total Gate Charge (Qg) | 200 nC max | [DATA_NEEDED: Qg @ VGS=10V] |
| Gate-Drain Charge (Qgd) typ | 71 nC | — |
| Power Dissipation (Ptot) at TC=25 C | 125 W | — |
| Power Dissipation (Ptot) at TA=25 C | 3.3 W | — |
| 工作结温 | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 45 K/W max | — |
| 封装 | DirectFET Isometric L8 | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 湿敏等级（MSL） | 1 (per JEDEC J-STD-020) | — |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 63 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| RDS(on) max (typical reference) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| 工作温度范围 | — | -55C to +150C (junction, typical) |
| 引脚数量 | — | 8 |
| RoHS 状态 | — | Compliant |