IRF7749L1TRPBF vs BSC0906NSATMA1 Comparación
Comparación detallada lado a lado de IRF7749L1TRPBF por Infineon y BSC0906NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7749L1TRPBF | BSC0906NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,88 | $0,48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7749L1TRPBF | — |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET / IR MOSFET | OptiMOS |
| Drain-to-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at TA=25 C | 33 A | — |
| Pulsed Drain Current (IDM) at TC=25 C | 200 A | — |
| Gate-to-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.9 V | [DATA_NEEDED: VGS(th) typ/min/max] |
| Drain-Source On-Resistance RDS(on) max | 1.5 mOhm at VGS=10 V | — |
| Drain-Source On-Resistance RDS(on) typ | 1.1 mOhm at VGS=10 V | — |
| Total Gate Charge (Qg) | 200 nC max | [DATA_NEEDED: Qg @ VGS=10V] |
| Gate-Drain Charge (Qgd) typ | 71 nC | — |
| Power Dissipation (Ptot) at TC=25 C | 125 W | — |
| Power Dissipation (Ptot) at TA=25 C | 3.3 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 45 K/W max | — |
| Encapsulado | DirectFET Isometric L8 | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel de sensibilidad a la humedad (MSL) | 1 (per JEDEC J-STD-020) | — |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 63 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| RDS(on) max (typical reference) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Rango de temperatura de funcionamiento | — | -55C to +150C (junction, typical) |
| Recuento de pines | — | 8 |
| Estado RoHS | — | Compliant |