IRF7832TRPBF vs IRFL014NTRPBF Vergleich

Detaillierter Direktvergleich von IRF7832TRPBF von Infineon und IRFL014NTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7832TRPBF IRFL014NTRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,92 $0,30
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7832TRPBF —
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET (trench MOSFET) HEXFET (planar N-channel, fifth generation)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 4.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typical 1.0 V to 2.5 V —
Total Gate Charge (Qg) typical 34 nC —
Power Dissipation (PD) at TA=25C 2.5 W —
Betriebstemperaturbereich -55 C to +150 C (TJ) -55 C to +150 C (junction)
Gehäuse 8-SO (SOIC-8) SOT-223 (TO-261-4), 4-pin (3 + tab)
Montageart Surface Mount Surface Mount
MSL-Level 1 (per JEDEC J-STD-020) Level 1 (per JEDEC J-STD-020)
RoHS-Status Compliant —
Lead-Free Yes —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at 25 C — 1.9 A
Continuous Drain Current (ID) at 70 C — [DATA_NEEDED: ID at 70 C]
Gate-to-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=10V — 160 milliohm
Gate Charge (Qg) typical — 7 nC
Threshold Voltage VGS(th) typical — [DATA_NEEDED: VGS(th)]
Power Dissipation (PD) at 25 C — 1.0 W (free air), up to 2.1 W with proper PCB copper
Avalanche Rated — Yes (fully avalanche rated)
dv/dt Rating — Yes (dynamic dv/dt rated)
Lead-Free / RoHS — Yes / Compliant

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