IRF7832TRPBF vs IRFL014NTRPBF 比較
詳細な並列比較: IRF7832TRPBF メーカー: Infineon および IRFL014NTRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF7832TRPBF | IRFL014NTRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.92 | $0.30 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7832TRPBF | — |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (trench MOSFET) | HEXFET (planar N-channel, fifth generation) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V | — |
| Total Gate Charge (Qg) typical | 34 nC | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 動作温度範囲 | -55 C to +150 C (TJ) | -55 C to +150 C (junction) |
| パッケージ | 8-SO (SOIC-8) | SOT-223 (TO-261-4), 4-pin (3 + tab) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | 1 (per JEDEC J-STD-020) | Level 1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant | — |
| Lead-Free | Yes | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25 C | — | 1.9 A |
| Continuous Drain Current (ID) at 70 C | — | [DATA_NEEDED: ID at 70 C] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 160 milliohm |
| Gate Charge (Qg) typical | — | 7 nC |
| Threshold Voltage VGS(th) typical | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at 25 C | — | 1.0 W (free air), up to 2.1 W with proper PCB copper |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| dv/dt Rating | — | Yes (dynamic dv/dt rated) |
| Lead-Free / RoHS | — | Yes / Compliant |