IRF7832TRPBF vs IRFL014NTRPBF Comparison
Detailed side-by-side comparison of IRF7832TRPBF by Infineon and IRFL014NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFL014NTRPBF - 55V N-Channel HEXFET MOSFET 1.9A SOT-223 | Infineon
IRFL014NTRPBF β ActiveSpecification Comparison
| Parameter | IRF7832TRPBF | IRFL014NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.30 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF7832TRPBF | β |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (trench MOSFET) | HEXFET (planar N-channel, fifth generation) |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm | β |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V | β |
| Total Gate Charge (Qg) typical | 34 nC | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Operating Temperature Range | -55 C to +150 C (TJ) | -55 C to +150 C (junction) |
| Package | 8-SO (SOIC-8) | SOT-223 (TO-261-4), 4-pin (3 + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | Level 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at 25 C | β | 1.9 A |
| Continuous Drain Current (ID) at 70 C | β | [DATA_NEEDED: ID at 70 C] |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| RDS(on) max at VGS=10V | β | 160 milliohm |
| Gate Charge (Qg) typical | β | 7 nC |
| Threshold Voltage VGS(th) typical | β | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at 25 C | β | 1.0 W (free air), up to 2.1 W with proper PCB copper |
| Avalanche Rated | β | Yes (fully avalanche rated) |
| dv/dt Rating | β | Yes (dynamic dv/dt rated) |
| Lead-Free / RoHS | β | Yes / Compliant |