IRF7907TRPBF vs IRF7342TRPBF Vergleich

Detaillierter Direktvergleich von IRF7907TRPBF von Infineon und IRF7342TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7907TRPBF IRF7342TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,43 $0,48
Configuration Dual N-Channel MOSFET Array Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) Max 9.1 A per channel at 25 C —
Pulsed Drain Current (IDM) Max 11 A —
On-Resistance (RDS(on)) Max 11.8 mOhm at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 1.35 V (typ) —
Total Power Dissipation (PD) Max 2 W —
Betriebstemperaturbereich -55 C to +150 C -55 C to +150 C (Tj)
Gehäuse 8-SOIC (SO-8) 8-SOIC (SO-8), surface mount
Montageart Surface Mount Surface Mount
Technology IR MOSFET (Infineon hexfet-style trench) HEXFET Power MOSFET (Fifth Generation), P-Channel
Lead-Free Status Yes (PBF suffix) —
Packaging Tape & Reel (TR) Tape and Reel (TR)
RoHS-Status Compliant —
Channel Polarity N-Channel (both) —
Part Number — IRF7342TRPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) — -3.4 A at 25 C
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) — -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) — 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) — 2 W
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type — P-Channel (enhancement mode)
Number of Channels — 2 (dual array)

Datenblätter & Ressourcen

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