IRF7907TRPBF vs IRF7342TRPBF Comparison

Detailed side-by-side comparison of IRF7907TRPBF by Infineon and IRF7342TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7907TRPBF IRF7342TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.43 $0.48
Configuration Dual N-Channel MOSFET Array Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage (VDS) Max 30 V β€”
Continuous Drain Current (ID) Max 9.1 A per channel at 25 C β€”
Pulsed Drain Current (IDM) Max 11 A β€”
On-Resistance (RDS(on)) Max 11.8 mOhm at VGS = 10 V β€”
Gate-Source Threshold Voltage (VGS(th)) 1.35 V (typ) β€”
Total Power Dissipation (PD) Max 2 W β€”
Operating Temperature Range -55 C to +150 C -55 C to +150 C (Tj)
Package 8-SOIC (SO-8) 8-SOIC (SO-8), surface mount
Mounting Type Surface Mount Surface Mount
Technology IR MOSFET (Infineon hexfet-style trench) HEXFET Power MOSFET (Fifth Generation), P-Channel
Lead-Free Status Yes (PBF suffix) β€”
Packaging Tape & Reel (TR) Tape and Reel (TR)
RoHS Status Compliant β€”
Channel Polarity N-Channel (both) β€”
Part Number β€” IRF7342TRPBF
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Drain-Source Voltage (Vds) β€” -55 V
Continuous Drain Current (Id) β€” -3.4 A at 25 C
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) β€” -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) β€” 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) β€” 2 W
Lead-Free / RoHS β€” Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type β€” P-Channel (enhancement mode)
Number of Channels β€” 2 (dual array)

Datasheets & Resources

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