IRF7907TRPBF vs IRF7342TRPBF 비교

다음의 상세 나란히 비교: IRF7907TRPBF 제조: Infineon 및 IRF7342TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7907TRPBF IRF7342TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.43 $0.48
Configuration Dual N-Channel MOSFET Array Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) Max 9.1 A per channel at 25 C —
Pulsed Drain Current (IDM) Max 11 A —
On-Resistance (RDS(on)) Max 11.8 mOhm at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 1.35 V (typ) —
Total Power Dissipation (PD) Max 2 W —
동작 온도 범위 -55 C to +150 C -55 C to +150 C (Tj)
패키지 8-SOIC (SO-8) 8-SOIC (SO-8), surface mount
실장 유형 Surface Mount Surface Mount
Technology IR MOSFET (Infineon hexfet-style trench) HEXFET Power MOSFET (Fifth Generation), P-Channel
Lead-Free Status Yes (PBF suffix) —
Packaging Tape & Reel (TR) Tape and Reel (TR)
RoHS 상태 Compliant —
Channel Polarity N-Channel (both) —
Part Number — IRF7342TRPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) — -3.4 A at 25 C
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) — -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) — 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) — 2 W
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type — P-Channel (enhancement mode)
Number of Channels — 2 (dual array)

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