IRF8734TRPBF vs IRLL024ZTRPBF Vergleich
Detaillierter Direktvergleich von IRF8734TRPBF von Infineon und IRLL024ZTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF8734TRPBF | IRLL024ZTRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,46 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Technology | StrongIRFET™ (HEXFET) | HEXFET Power MOSFET (trench-gate) |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 21 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.5 mOhm | — |
| Gate Charge (Qg) typ | 20 nC | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Gehäuse / Bauform | 8-SOIC (SO-8) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Avalanche Energy Rating | Fully characterized avalanche voltage | — |
| RoHS-Status | Compliant (PBF suffix) | Compliant |
| Lead-Free / Halogen-Free | Lead-free (PBF suffix) | — |
| MSL-Level | [DATA_NEEDED: MSL rating per J-STD-020] | 1 (unlimited floor life) |
| Packaging | Tape & Reel (TR) | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | — | 55 V |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 60 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| Total Gate Charge (Qg) typical | — | 7 nC |
| Power Dissipation (PD) at TA=25°C | — | 1 W |
| Operating Junction Temperature (TJ) | — | -55 °C to +150 °C |
| Gehäuse | — | SOT-223 (TO-261-4) |