IRF8734TRPBF vs IRLL024ZTRPBF Comparison

Detailed side-by-side comparison of IRF8734TRPBF by Infineon and IRLL024ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF8734TRPBF IRLL024ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.46
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Technology StrongIRFETβ„’ (HEXFET) HEXFET Power MOSFET (trench-gate)
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at Ta 21 A β€”
On-Resistance RDS(on) max at VGS=10V 3.5 mOhm β€”
Gate Charge (Qg) typ 20 nC β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Package / Case 8-SOIC (SO-8) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] β€”
Avalanche Energy Rating Fully characterized avalanche voltage β€”
RoHS Status Compliant (PBF suffix) Compliant
Lead-Free / Halogen-Free Lead-free (PBF suffix) β€”
MSL Level [DATA_NEEDED: MSL rating per J-STD-020] 1 (unlimited floor life)
Packaging Tape & Reel (TR) β€”
FET Type β€” N-Channel enhancement-mode
Drain-Source Voltage (VDS) max β€” 55 V
Gate-Source Voltage (VGS) max β€” Β±16 V
Continuous Drain Current (ID) at TC=25Β°C β€” 5 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V β€” 60 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO)
Total Gate Charge (Qg) typical β€” 7 nC
Power Dissipation (PD) at TA=25Β°C β€” 1 W
Operating Junction Temperature (TJ) β€” -55 Β°C to +150 Β°C
Package β€” SOT-223 (TO-261-4)

Datasheets & Resources

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