IRF8734TRPBF vs IRLL024ZTRPBF Сравнение
Подробное сравнение бок о бок IRF8734TRPBF от Infineon и IRLL024ZTRPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF8734TRPBF | IRLL024ZTRPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,48 | $0,46 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Technology | StrongIRFET™ (HEXFET) | HEXFET Power MOSFET (trench-gate) |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 21 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.5 mOhm | — |
| Gate Charge (Qg) typ | 20 nC | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Корпус / Типоразмер | 8-SOIC (SO-8) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +150C (junction) | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Avalanche Energy Rating | Fully characterized avalanche voltage | — |
| Статус RoHS | Compliant (PBF suffix) | Compliant |
| Lead-Free / Halogen-Free | Lead-free (PBF suffix) | — |
| Уровень MSL | [DATA_NEEDED: MSL rating per J-STD-020] | 1 (unlimited floor life) |
| Packaging | Tape & Reel (TR) | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | — | 55 V |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 60 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| Total Gate Charge (Qg) typical | — | 7 nC |
| Power Dissipation (PD) at TA=25°C | — | 1 W |
| Operating Junction Temperature (TJ) | — | -55 °C to +150 °C |
| Корпус | — | SOT-223 (TO-261-4) |