IRF9530NPBF vs IRF9540NPBF Vergleich
Detaillierter Direktvergleich von IRF9530NPBF von Infineon und IRF9540NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF9530NPBF | IRF9540NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,86 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC=25°C | -14 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) typ | 38.7 nC | — |
| Maximum Power Dissition at TC=25°C | 79 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | — |
| Gehäuse | TO-220AB (through-hole) | — |
| Montageart | Through Hole | Through Hole |
| Mounting Screw Torque (max) | [DATA_NEEDED: maximum torque] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| dv/dt Rating | Dynamic dV/dt rated | — |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF9540NPBF |
| Transistortyp | — | P-Channel MOSFET (HEXFET Power MOSFET) |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at Tc | — | -23 A |
| Gate-to-Source Voltage (VGS) max | — | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 117 mOhm |
| Total Gate Charge (Qg) | — | 64.7 nC |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| Betriebs-Sperrschichttemperaturbereich | — | -55 C to +175 C |
| Gehäuse / Bauform | — | TO-220AB (through-hole, 3 pins + tab) |
| Process Technology | — | Planar HEXFET cell structure |
| Qualification | — | JEDEC standard |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes (Pb-free matte tin plating) |