IRF9530NPBF vs IRF9540NPBF Comparison
Detailed side-by-side comparison of IRF9530NPBF by Infineon and IRF9540NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRF9530NPBF - -100V P-Channel HEXFET MOSFET, 14A, TO-220AB | Infineon
IRF9530NPBF β ActiveSpecification Comparison
| Parameter | IRF9530NPBF | IRF9540NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.86 |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) | -100 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | -14 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mΞ© | β |
| Gate-Source Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) typ | 38.7 nC | β |
| Maximum Power Dissition at TC=25Β°C | 79 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | TO-220AB (through-hole) | β |
| Mounting Type | Through Hole | Through Hole |
| Mounting Screw Torque (max) | [DATA_NEEDED: maximum torque] | β |
| Avalanche Rating | Repetitive avalanche rated | β |
| dv/dt Rating | Dynamic dV/dt rated | β |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS compliant | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRF9540NPBF |
| Transistor Type | β | P-Channel MOSFET (HEXFET Power MOSFET) |
| Drain-to-Source Voltage (VDS) | β | -100 V |
| Continuous Drain Current (ID) at Tc | β | -23 A |
| Gate-to-Source Voltage (VGS) max | β | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | β | 117 mOhm |
| Total Gate Charge (Qg) | β | 64.7 nC |
| Power Dissipation (PD) at Tc=25C | β | 140 W |
| Operating Junction Temperature Range | β | -55 C to +175 C |
| Package / Case | β | TO-220AB (through-hole, 3 pins + tab) |
| Process Technology | β | Planar HEXFET cell structure |
| Qualification | β | JEDEC standard |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes (Pb-free matte tin plating) |