IRF9530NPBF vs IRF9540NPBF Comparação
Comparação detalhada lado a lado de IRF9530NPBF por Infineon e IRF9540NPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRF9530NPBF | IRF9540NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,65 | $0,86 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC=25°C | -14 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) typ | 38.7 nC | — |
| Maximum Power Dissition at TC=25°C | 79 W | — |
| Temperatura de junção de operação | -55°C to +175°C | — |
| Encapsulamento | TO-220AB (through-hole) | — |
| Tipo de montagem | Through Hole | Through Hole |
| Mounting Screw Torque (max) | [DATA_NEEDED: maximum torque] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| dv/dt Rating | Dynamic dV/dt rated | — |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF9540NPBF |
| Tipo de transistor | — | P-Channel MOSFET (HEXFET Power MOSFET) |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at Tc | — | -23 A |
| Gate-to-Source Voltage (VGS) max | — | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 117 mOhm |
| Total Gate Charge (Qg) | — | 64.7 nC |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| Faixa de temperatura de junção de operação | — | -55 C to +175 C |
| Encapsulamento / Caixa | — | TO-220AB (through-hole, 3 pins + tab) |
| Process Technology | — | Planar HEXFET cell structure |
| Qualification | — | JEDEC standard |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes (Pb-free matte tin plating) |