IRF9Z24NPBF vs IRF9540NPBF Vergleich
Detaillierter Direktvergleich von IRF9Z24NPBF von Infineon und IRF9540NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF9Z24NPBF | IRF9540NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,86 |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (Vdss) | -55 V | — |
| Continuous Drain Current (Id) @ Tc=25C | -12 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (Vgs) max | ±20 V | — |
| Rds(on) max @ Vgs=-10V | 0.175 ohm | — |
| Gate Charge (Qg) typ | 12.7 nC | — |
| Power Dissipation (Pd) @ Tc=25C | 45 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.67 C/W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | TO-220AB (3-pin) | — |
| Montageart | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Gate Threshold Voltage (Vgs(th)) typ | [DATA_NEEDED: Vgs(th)] | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Technology | HEXFET (planar DMOS, Gen 5) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF9540NPBF |
| Transistortyp | — | P-Channel MOSFET (HEXFET Power MOSFET) |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at Tc | — | -23 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 117 mOhm |
| Total Gate Charge (Qg) | — | 64.7 nC |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| Betriebs-Sperrschichttemperaturbereich | — | -55 C to +175 C |
| Gehäuse / Bauform | — | TO-220AB (through-hole, 3 pins + tab) |
| Process Technology | — | Planar HEXFET cell structure |
| Qualification | — | JEDEC standard |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes (Pb-free matte tin plating) |