IRF9Z24NPBF vs IRF9540NPBF 비교
다음의 상세 나란히 비교: IRF9Z24NPBF 제조: Infineon 및 IRF9540NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF9Z24NPBF | IRF9540NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.62 | $0.86 |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (Vdss) | -55 V | — |
| Continuous Drain Current (Id) @ Tc=25C | -12 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (Vgs) max | ±20 V | — |
| Rds(on) max @ Vgs=-10V | 0.175 ohm | — |
| Gate Charge (Qg) typ | 12.7 nC | — |
| Power Dissipation (Pd) @ Tc=25C | 45 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.67 C/W | — |
| 동작 접합 온도 | -55C to +175C | — |
| 패키지 | TO-220AB (3-pin) | — |
| 실장 유형 | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Gate Threshold Voltage (Vgs(th)) typ | [DATA_NEEDED: Vgs(th)] | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Technology | HEXFET (planar DMOS, Gen 5) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF9540NPBF |
| 트랜지스터 유형 | — | P-Channel MOSFET (HEXFET Power MOSFET) |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at Tc | — | -23 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 117 mOhm |
| Total Gate Charge (Qg) | — | 64.7 nC |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| 동작 접합 온도 범위 | — | -55 C to +175 C |
| 패키지 / 케이스 | — | TO-220AB (through-hole, 3 pins + tab) |
| Process Technology | — | Planar HEXFET cell structure |
| Qualification | — | JEDEC standard |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes (Pb-free matte tin plating) |