IRF9Z24NPBF vs IRF9540NPBF 对比
详细并排对比 IRF9Z24NPBF 出自 Infineon 和 IRF9540NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF9Z24NPBF | IRF9540NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.86 |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (Vdss) | -55 V | — |
| Continuous Drain Current (Id) @ Tc=25C | -12 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (Vgs) max | ±20 V | — |
| Rds(on) max @ Vgs=-10V | 0.175 ohm | — |
| Gate Charge (Qg) typ | 12.7 nC | — |
| Power Dissipation (Pd) @ Tc=25C | 45 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.67 C/W | — |
| 工作结温 | -55C to +175C | — |
| 封装 | TO-220AB (3-pin) | — |
| 安装类型 | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Gate Threshold Voltage (Vgs(th)) typ | [DATA_NEEDED: Vgs(th)] | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Technology | HEXFET (planar DMOS, Gen 5) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF9540NPBF |
| 晶体管类型 | — | P-Channel MOSFET (HEXFET Power MOSFET) |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at Tc | — | -23 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 117 mOhm |
| Total Gate Charge (Qg) | — | 64.7 nC |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| 工作结温范围 | — | -55 C to +175 C |
| 封装 / 外壳 | — | TO-220AB (through-hole, 3 pins + tab) |
| Process Technology | — | Planar HEXFET cell structure |
| Qualification | — | JEDEC standard |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes (Pb-free matte tin plating) |