IRFB3207ZPBF vs IPP069N20NM6AKSA1 Vergleich
Detaillierter Direktvergleich von IRFB3207ZPBF von Infineon und IPP069N20NM6AKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ AktivSpezifikationsvergleich
| Parameter | IRFB3207ZPBF | IPP069N20NM6AKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $4,10 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | 136 A |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | TO-220AB (3-lead through-hole) | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) |
| Montageart | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| MSL-Level | N/A (through-hole) | N/A (through-hole package) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 15.3 A |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| On-Resistance RDS(on) max at VGS=10V | — | 6.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Total Gate Charge at VGS=10V (Qg) | — | [DATA_NEEDED: Qg value] |
| Betriebstemperaturbereich | — | -55C to +175C |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Tab Connection | — | Electrically connected to Drain |