IRFB3207ZPBF vs IPP069N20NM6AKSA1 对比

详细并排对比 IRFB3207ZPBF 出自 Infineon 和 IPP069N20NM6AKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFB3207ZPBF IPP069N20NM6AKSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.62 $4.10
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) OptiMOS 6 trench MOSFET
Drain-Source Voltage (VDS) 75 V 200 V
Continuous Drain Current (ID) at TC=25C 120 A 136 A
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
工作结温 -55 C to +175 C —
封装 TO-220AB (3-lead through-hole) PG-TO220-3-1 (TO-220-3 through-hole, 3+tab)
安装类型 Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL 等级 N/A (through-hole) N/A (through-hole package)
Avalanche Rated Yes (improved Z-variant ruggedness) —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 15.3 A
Power Dissipation (PD) at TC=25C — 300 W
Power Dissipation (PD) at TA=25C — 3.8 W
On-Resistance RDS(on) max at VGS=10V — 6.9 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Total Gate Charge at VGS=10V (Qg) — [DATA_NEEDED: Qg value]
工作温度范围 — -55C to +175C
RoHS 状态 — Compliant
Lead-Free — Yes
Tab Connection — Electrically connected to Drain

数据手册与资源

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