IRFB3207ZPBF vs IPP069N20NM6AKSA1 Comparaison
Comparaison détaillée côte à côte de IRFB3207ZPBF par Infineon et IPP069N20NM6AKSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ ActifComparaison des spécifications
| Paramètre | IRFB3207ZPBF | IPP069N20NM6AKSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,62 | $4,10 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | 136 A |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Température de jonction en fonctionnement | -55 C to +175 C | — |
| Boîtier | TO-220AB (3-lead through-hole) | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) |
| Type de montage | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Niveau MSL | N/A (through-hole) | N/A (through-hole package) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 15.3 A |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| On-Resistance RDS(on) max at VGS=10V | — | 6.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Total Gate Charge at VGS=10V (Qg) | — | [DATA_NEEDED: Qg value] |
| Plage de température de fonctionnement | — | -55C to +175C |
| Statut RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Tab Connection | — | Electrically connected to Drain |