IRFB3207ZPBF vs IRF3205ZSTRLPBF Vergleich

Detaillierter Direktvergleich von IRFB3207ZPBF von Infineon und IRF3205ZSTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFB3207ZPBF IRF3205ZSTRLPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,62 $1,45
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 75 V 55 V
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: IDM]
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm 6.5 mOhm
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Betriebs-Sperrschichttemperatur -55 C to +175 C -55C to +175C
Gehäuse TO-220AB (3-lead through-hole) D2PAK (TO-263)
Montageart Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL-Level N/A (through-hole) 1
Avalanche Rated Yes (improved Z-variant ruggedness) —
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 110 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — 76 nC
Power Dissipation (PD) at Tc=25C — 170 W
Packaging — Tape & Reel (left reel)
RoHS-Status — Compliant
Body Diode — Avalanche-rated intrinsic

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