IRFB3207ZPBF vs IRF3205ZSTRLPBF Comparación
Comparación detallada lado a lado de IRFB3207ZPBF por Infineon y IRF3205ZSTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFB3207ZPBF | IRF3205ZSTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $1,45 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 75 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | 6.5 mOhm |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | -55C to +175C |
| Encapsulado | TO-220AB (3-lead through-hole) | D2PAK (TO-263) |
| Tipo de montaje | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Nivel MSL | N/A (through-hole) | 1 |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 110 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | 76 nC |
| Power Dissipation (PD) at Tc=25C | — | 170 W |
| Packaging | — | Tape & Reel (left reel) |
| Estado RoHS | — | Compliant |
| Body Diode | — | Avalanche-rated intrinsic |