IRFB3207ZPBF vs IRF3205ZSTRLPBF 비교
다음의 상세 나란히 비교: IRFB3207ZPBF 제조: Infineon 및 IRF3205ZSTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFB3207ZPBF | IRF3205ZSTRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.62 | $1.45 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 75 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | 6.5 mOhm |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| 동작 접합 온도 | -55 C to +175 C | -55C to +175C |
| 패키지 | TO-220AB (3-lead through-hole) | D2PAK (TO-263) |
| 실장 유형 | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| MSL 레벨 | N/A (through-hole) | 1 |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 110 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | 76 nC |
| Power Dissipation (PD) at Tc=25C | — | 170 W |
| Packaging | — | Tape & Reel (left reel) |
| RoHS 상태 | — | Compliant |
| Body Diode | — | Avalanche-rated intrinsic |