IRFB4110PBF vs IRF1010EPBF Vergleich
Detaillierter Direktvergleich von IRFB4110PBF von Infineon und IRF1010EPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFB4110PBF | IRF1010EPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $0,45 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ | — |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 370 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | TO-220AB (through-hole) | TO-220AB |
| Technology | HEXFET (planar DMOS) | HEXFET Power MOSFET |
| Montageart | Through Hole | Through Hole |
| RoHS-Status | Compliant (Pb-free suffix) | RoHS3 Compliant |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) | — | 84 A at Tc |
| Power Dissipation (PD) | — | 200 W at Tc |
| On-Resistance (RDS(on)) | — | 12 mOhm |
| Total Gate Charge (Qg) | — | 86.6 nC |
| Configuration | — | Single FET |
| MSL-Level | — | 3 (168 Hours) |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |
| Rise Time / Fall Time | — | [DATA_NEEDED: switching times] |
| Thermal Resistance (RthJC) | — | [DATA_NEEDED: thermal resistance junction to case] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |