IRFB4127PBF vs IRFB7545PBF Vergleich

Detaillierter Direktvergleich von IRFB4127PBF von Infineon und IRFB7545PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFB4127PBF IRFB7545PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,68 $0,95
Manufacturer Infineon Technologies Infineon Technologies
Part Number IRFB4127PBF IRFB7545PBF
Technology TrenchFET Gen 6 (HEXFET) StrongIRFET™ (HEXFET, N-Channel)
Channel Type N-Channel —
Drain-Source Voltage (Vdss) 200 V —
Continuous Drain Current (Id) at Tc 76 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (Vgs) max ±20 V —
Drain-Source On-Resistance (Rds(on)) max 20 mOhm —
Total Gate Charge (Qg) 100 nC —
Power Dissipation (Pd) at Tc 375 W —
Betriebs-Sperrschichttemperatur -55C to +175C -55C to +175C
Gehäuse / Bauform TO-220AB (through-hole) —
Montageart Through Hole Through Hole (THT)
RoHS-Status Lead-Free (PBF suffix indicates RoHS compliance) —
Configuration Single —
Polarity — N-Channel
VDS (Drain-Source Voltage) max — 60 V
VGS (Gate-Source Voltage) max — ±20 V
RDS(on) max at VGS=10V — 5.9 mOhm
Continuous Drain Current (ID) at Tc=25C — 95 A
Pulsed Drain Current (IDM) — 380 A
Single-Pulse Avalanche Current (IAS) — 57 A
Power Dissipation (PD) at Tc=25C — 125 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Gehäuse — TO-220AB (Through-Hole)
Lead-Free / RoHS — Yes (Lead-Free, PBF suffix)
MSL-Level — N/A (Through-Hole)
Gate Drive Voltage (typical) — 10 V
Avalanche Energy Rated — Yes

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