IRFB4127PBF vs IRFB7545PBF Comparison
Detailed side-by-side comparison of IRFB4127PBF by Infineon and IRFB7545PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4127PBF | IRFB7545PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $0.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRFB4127PBF | IRFB7545PBF |
| Technology | TrenchFET Gen 6 (HEXFET) | StrongIRFETβ’ (HEXFET, N-Channel) |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 200 V | β |
| Continuous Drain Current (Id) at Tc | 76 A | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (Vgs) max | Β±20 V | β |
| Drain-Source On-Resistance (Rds(on)) max | 20 mOhm | β |
| Total Gate Charge (Qg) | 100 nC | β |
| Power Dissipation (Pd) at Tc | 375 W | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package / Case | TO-220AB (through-hole) | β |
| Mounting Type | Through Hole | Through Hole (THT) |
| RoHS Status | Lead-Free (PBF suffix indicates RoHS compliance) | β |
| Configuration | Single | β |
| Polarity | β | N-Channel |
| VDS (Drain-Source Voltage) max | β | 60 V |
| VGS (Gate-Source Voltage) max | β | Β±20 V |
| RDS(on) max at VGS=10V | β | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | β | 95 A |
| Pulsed Drain Current (IDM) | β | 380 A |
| Single-Pulse Avalanche Current (IAS) | β | 57 A |
| Power Dissipation (PD) at Tc=25C | β | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | β | 1.0 C/W |
| Package | β | TO-220AB (Through-Hole) |
| Lead-Free / RoHS | β | Yes (Lead-Free, PBF suffix) |
| MSL Level | β | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | β | 10 V |
| Avalanche Energy Rated | β | Yes |