IRFB4310PBF vs IRFB4110PBF Vergleich
Detaillierter Direktvergleich von IRFB4310PBF von Infineon und IRFB4110PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFB4310PBF | IRFB4110PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,95 | $1,55 |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | HEXFET (planar DMOS) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 130 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | 4.5 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | ±20 V |
| Total Gate Charge (Qg) | 170 nC | — |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | — |
| Gehäuse | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Montageart | Through Hole | Through Hole |
| Avalanche Rated | Yes | — |
| RoHS-Status | Compliant | Compliant (Pb-free suffix) |
| Lead-Free | Yes (Pb-free PBF suffix) | Yes (PBF suffix denotes Pb-free) |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |