IRFB4310PBF vs IRFB4110PBF Comparación
Comparación detallada lado a lado de IRFB4310PBF por Infineon y IRFB4110PBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFB4310PBF | IRFB4110PBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,95 | $1,55 |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | HEXFET (planar DMOS) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 130 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | 4.5 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | ±20 V |
| Total Gate Charge (Qg) | 170 nC | — |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Rango de temperatura de funcionamiento | -55C to +175C (junction) | — |
| Encapsulado | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Avalanche Rated | Yes | — |
| Estado RoHS | Compliant | Compliant (Pb-free suffix) |
| Lead-Free | Yes (Pb-free PBF suffix) | Yes (PBF suffix denotes Pb-free) |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |