IRFB4410PBF vs IRF1407PBF Vergleich

Detaillierter Direktvergleich von IRFB4410PBF von Infineon und IRF1407PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFB4410PBF IRF1407PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,15 $0,86
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) - HEXFET HEXFET (stripe-planar MOSFET)
Drain-to-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) @ 25C 88 A (Tc) —
Continuous Drain Current (Id) @ 100C [DATA_NEEDED: Id @ 100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm pulse] —
Gate-to-Source Voltage (Vgs) [DATA_NEEDED: Vgs max] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
RDS(on) max @ VGS=10V 10 mOhm —
Total Gate Charge (Qg) 120 nC —
Power Dissipation (Pd) 200 W (Tc) —
Betriebstemperaturbereich -55C to +175C (Tj) -55 C to +175 C
Gehäuse TO-220AB (through-hole) TO-220AB (through-hole, 3 leads)
Montageart Through Hole Through Hole
Avalanche Energy Rating Single-pulse avalanche rated —
MSL-Level 1 (unlimited) —
RoHS-Status Compliant (Pb-free PBF suffix) —
Series HEXFET —
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 130 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C — 330 W
On-Resistance RDS(on) at VGS=10V — 7.8 mOhm (typical)
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS threshold typical/min/max]
Gate Charge (Qg) — 160 nC (typical)
Maximum Junction Temperature — 175 C
Lead-Free / RoHS — Lead-free, RoHS compliant (PBF suffix)
Avalanche Rating — Repetitive avalanche rated

Datenblätter & Ressourcen

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