IRFB4410PBF vs IRF1407PBF Comparison

Detailed side-by-side comparison of IRFB4410PBF by Infineon and IRF1407PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB4410PBF IRF1407PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.15 $0.86
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) - HEXFET HEXFET (stripe-planar MOSFET)
Drain-to-Source Voltage (Vdss) 100 V β€”
Continuous Drain Current (Id) @ 25C 88 A (Tc) β€”
Continuous Drain Current (Id) @ 100C [DATA_NEEDED: Id @ 100C] β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm pulse] β€”
Gate-to-Source Voltage (Vgs) [DATA_NEEDED: Vgs max] β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] β€”
RDS(on) max @ VGS=10V 10 mOhm β€”
Total Gate Charge (Qg) 120 nC β€”
Power Dissipation (Pd) 200 W (Tc) β€”
Operating Temperature Range -55C to +175C (Tj) -55 C to +175 C
Package TO-220AB (through-hole) TO-220AB (through-hole, 3 leads)
Mounting Type Through Hole Through Hole
Avalanche Energy Rating Single-pulse avalanche rated β€”
MSL Level 1 (unlimited) β€”
RoHS Status Compliant (Pb-free PBF suffix) β€”
Series HEXFET β€”
Drain-Source Voltage (VDS) β€” 75 V
Continuous Drain Current (ID) at TC=25C β€” 130 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C β€” 330 W
On-Resistance RDS(on) at VGS=10V β€” 7.8 mOhm (typical)
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS threshold typical/min/max]
Gate Charge (Qg) β€” 160 nC (typical)
Maximum Junction Temperature β€” 175 C
Lead-Free / RoHS β€” Lead-free, RoHS compliant (PBF suffix)
Avalanche Rating β€” Repetitive avalanche rated

Datasheets & Resources

Browse All Products Create BOM Request Quote